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| inchange semiconductor isc product specification isc silicon pnp power transistors BD750B/750c description collector-emitter sustaining voltage- : v ceo(sus) = -100v(min)- bd751b = -130v(min)- bd751c high power dissipation complement to type bd751b/751c applications designed for high voltage and high power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit BD750B -110 v cev collector-emitter voltage bd750c -140 v BD750B -100 v ceo(sus) collector-emitter voltage bd750c -130 v v ebo emitter-base voltage -7 v i c collector current-continuous -20 a i b b base current-continuous -5 a p c collector power dissipation@t c =25 250 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.875 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors BD750B/750c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BD750B -100 v ceo(sus) collector-emitter sustaining voltage bd750c i c = -100ma ; i b = 0 -130 v BD750B i c = -7.5a; i b = -0.75a b -1.5 v ce (sat) collector-emitter saturation voltage bd750c i c = -5a; i b = -0.5a b -1.0 v BD750B i c = -7.5a; i b = -0.75a b -1.8 v be (sat) base-emitter saturation voltage bd750c i c = -5a; i b = -0.5a b -1.8 v BD750B v cev = -110v;v be (off) = -1.5v -0.5 i cev collector cutoff current bd750c v cev = -140v;v be (off) = -1.5v -0.5 ma i ebo emitter cutoff current v eb = -7v; i c =0 -1.0 ma BD750B i c = -7.5a ; v ce = -2v 15 60 h fe dc current gain bd750c i c = -5a ; v ce = -2v 25 100 f t current-gain?bandwidth product i c = -0.5a ;v ce = -10v; f test = 1mhz 4 mhz isc website www.iscsemi.cn 2 |
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